UVISEL Plus

UVISEL PLUS-HORIBA

Spectroscopic Ellipsometer from FUV to NIR: 190 to 2100 nm

박막측정용 Reference Ellipsometer

UVISEL Plus ellipsometer 는 박막, 표면 및 물성 특성 측정/분석 특성화 장비 입니다.

각 구성이 모듈화 되어 있어 고성능 분석을 위한 최상의 조합을 자랑합니다.

UVISEL Plus는 보다 빠르고 정확하게 측정하도록 설계된 최신 기술을 적용시켰습니다. 최신 기술인 FastAcq 기술은 박막특성 측정/분석을 위해 설계된 double modulation 광학 기술을 기반으로 합니다.

새로운 전기적 신호, 데이터 처리 및 고속 분광기를 기반으로 하는 FastAcq 기술은 190 nm에서 2100 nm까지의 파장 영역의 측정을 고분해능으로 3분 이내에 측정할 수 있습니다.

UVISEL Plus 엘립소미터는 phase modulation (위상 변조_HORIBA 특허)기술을 기반으로 190 ~ 2100 nm의 스펙트럼 범위를 연속적으로 커버할 수 있는 강력한 광학 설계를 기반으로 합니다. 높은 정확도, 고해상도 측정 및 우수한 신호 대 잡음비 광학 시스템으로 고품질 데이터를 전체 스펙트럼 범위에 걸쳐 취득이 가능 합니다.

phase modulation technology(위상 변조 기술)는 기계적인 움직임 없이 고주파(50,000 Hz)위상 변조법으로 편광 변화를 측정하는 것이  특징입니다.

결과:

  • 모든 값(Ψ,Δ)에 대해 높은 정확도 측정 
  • FUV(극자외선)와 NIR(근적외선)의 신호/잡음비가 우수

  • 최대 50ms/point 로 매우 빠른 데이터 수집이 가능하여, 동역학 연구 및 공정 프로세스 실시간 측정에 이상적

 

UVISEL Plus의 모듈식 설계를 통해 벤치탑 계측 툴로 사용하거나 디스플레이, 반도체 공정의 in-situ 에 사용하거나 롤투롤(roll to roll) 공정에 사용할 수 있습니다.

UVISEL Plus는 호리바가 제공하는 DeltaPsi2 소프트웨어 플랫폼(DeltaPsi2 software platform) 또는 모든 HORIBA 타원엘립소미터에 공통적으로 사용되는 Auto-Soft 인터페이스에 의해 제어됩니다.

DeltaPsi2는 일상적인 박막 분석/응용 프로그램과 고급 박막 응용 프로그램을 모두 다룰 수 있는 완벽한 측정 및 모델링 패키지를 제공하며, Auto-Soft 인터페이스는 직관적인 인터페이스를 통해 데이터 수집 및 분석을 효율적으로

진행할 수 있도록 도움을 줍니다.

UVISEL Plus와 FastAcq 기술은 재료 연구 및 가공, 평판 디스플레이, 마이크로 일렉트로닉스 및 광전지 분야에서 박막 두께 및 광학 상수 측정을 위한 가장 다재다능한 분광타원엘립소미터입니다.

UVISEL Plus는 재료 과학을 위한 Reference ellipsometer입니다.

Segment: Scientific
Manufacturing Company: HORIBA France SAS

Product benefits

  • 최고의 정확도와 감도
  • 기능 별 모듈식 설계
  • Large spectral range: 190-2100 nm (0.6eV – 6.5eV)
  • 측정, 모델링 및 자동 작업을 위한 완전히 통합된 소프트웨어 패키지

 

Obtained information

  • 박막 두께 1Å~50 µm
  • 표면 및 계면 거칠기
  • 등방성, 이방성 및 등급화된 필름에 대한 광학 상수(n,k)
  • 측정 가능한 광학 데이터: 굴절률, 흡수 계수, 광학밴드갭 Eg, 유전율 등
  • 재료 특성 : 복합합금 산화물, 기공도, 결정성, 투과도 등
  • 뮬러매트릭스

UVISEL Specifications

  • Spectral range: from 190 to 885 nm │NIR extension option up to 2100 nm
  • Detection: High resolution monochromator coupled to sensitive detectors

 

Manual Configuration

  • Spot size: 0.05 – 0.1 – 1 mm (pinhole)
  • Sample stage: 150 mm, manual height (20mm) and tilt adjustment
  • Goniometer: Manually adjustable angle from 55° to 90° by step of 5°

 

Automatic Configuration

  • Automation sample stage: 200x200mm, 300x300 mm XY sample stage, manual height (4mm) and tilt adjustment, XYZ sample stage, theta stage
  • Automatic goniometer: Automatically adjustable angle from 45° to 90° by step of 0.01°

 

Integrated Goniometer

  • Manual angle of incidence: 35° to 90° by 5° step
  • Sample holder: 150mm, 20mm manual z height adjustment
  • Autocollimation system for sample alignment in option
  • Dimension: width: 25cm; height: 35cm; depth: 21 cm

 

In situ configuration

  • Mechanical adaptation: CF35 or KF40 flanges
  • Easy swith between in-situ and ex-situ configurations
  • More information

 

Options

  • Accessories: temperature controlled cell, liquid cell, electrochemical cell, reflectometry module to measure reflectance at 0° incidence, and more
  • Vision: CCD camera
  • More information

 

Performance

  •  Accuracy: Ψ= 45°±0.01° and Δ=0°±0.01° measured in straight-through air configuration1.5 – 5.3 eV
  • Repeatability: NIST 1000Å SiO2/Si (190-2100 nm): d ± 0.1 % – n(632.8nm) ± 0.0001
Characterization of DNA sensor pads using UVISEL Spectroscopic phase modulated Ellipsometer
Characterization of DNA sensor pads using UVISEL Spectroscopic phase modulated Ellipsometer
Spectroscopic Ellipsometric measurements on biochip structures in a liquid flow cell environment
Spectroscopic Ellipsometric measurements on biochip structures in a liquid flow cell environment
Characterization of Engineered nanomaterials by Spectroscopic Ellipsometry
Characterization of Engineered nanomaterials by Spectroscopic Ellipsometry
Characterization of photovoltaic devices by spectroscopic ellipsometry
Characterization of photovoltaic devices by spectroscopic ellipsometry
Characterization of TFT and LTPS TFT-LCD Display Panels by Spectroscopic Ellipsometry
Characterization of TFT and LTPS TFT-LCD Display Panels by Spectroscopic Ellipsometry
Spectroscopic ellipsometry is an excellent technique for the highly accurate characterization of TFT-LCD display panels based on a-Si and LTPS technologies. Owing to the sensitivity of the UVISEL spectroscopic ellipsometer and the advanced modeling features included in the DeltaPsi2 software it is possible to detect in a multistack different a-Si layers processed by various methods. Moreover the spectroscopic ellipsometry measurements allow determination of the grain size of p-Si films and illustrate the ability to characterize the crystallinity of silicon with high accuracy.
Encapsulated Organic Light Emitting Diode Devices Characterization by Spectroscopic Ellipsometry
Encapsulated Organic Light Emitting Diode Devices Characterization by Spectroscopic Ellipsometry
In this Application Note Spectroscopic Ellipsometry, a standard optical characterization technique used to measure multi-layered thicknesses and optical constants (n,k), has been successfully used to characterize encapsulated OLED devices. This report also investigates the aging process of OLED. Spectroscopic ellipsometry is a powerful technique to characterize the thickness and optical constants of encapsulated OLED devices. For the case of non-transparent encapsulation the combination of ellipsometric measurements via the glass substrate and the powerful modelling features of DeltaPsi2 software make it possible to analyze “this reverse sample”.
OLED – Organic Light Emitting Diodes
OLED – Organic Light Emitting Diodes
Phase Modulated Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of complete OLED stacks. The technique allows the determination of film thickness, optical properties and the effect of dopants to the active layers. For very high throughput applications where large area flat panels are to be characterized in a production environment the Jobin Yvon FF-1000 ellipsometer has a fully automated sample stage able to accept samples up to 1000 mm x 1000 mm. This accurate, automated thin film metrology tool delivers both unique performance and proven reliability for on-line quality control of production processes.
Optical Characterization of Organic Semiconductors by Spectroscopic Ellipsometry
Optical Characterization of Organic Semiconductors by Spectroscopic Ellipsometry
Spectroscopic Ellipsometers are optical thin film measurement tools for determining film thickness and optical constants (n,k) of thin film structures. They are widely used in the microelectronics, display, photonics, photovoltaics, lighting, optical and functional coating, biotechnology industries. When compared with other optical metrology instruments the unique strength of spectroscopic ellipsometers are based on their highly precise and simple experimental measurements plus physical and material information derived from optical constants characterization.
Plasma Display Panel Characterization Using Spectroscopic Ellipsometry
Plasma Display Panel Characterization Using Spectroscopic Ellipsometry
For multilayer structures it is always helpful and often necessary to know the properties of each film. Using the Jobin Yvon UNISEL NIR it is a straightforward procedure to investigate the thickness and optical properties of the complete PDP structure. To ensure high yields in quality and quantity the FF-1000 ellipsometer is dedicated to the flat panel industries with a fully automated large area sample stage able to accept samples up to 1000 mm x 1000 mm. This accurate, automated thin film metrology tool delivers both unique performance and proven reliability for online quality control of production processes.
TFT-LCD Display Characterization Using Spectroscopic Ellipsometry
TFT-LCD Display Characterization Using Spectroscopic Ellipsometry
Phase Modulated Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of complete TFT-LCD device. The technique allows the determination of film thickness, optical properties but also more complex properties such as graded or anisotropic layers and effect of dopants. In the flat panel industry the pressure to reduce manufacturing coasts is and reliable metrology tools are required to control the different steps of the process. Spectroscopic ellipsometry is a non-destructive technique which presents advanced capabilities and proven reliability tailored for qualification and on-line production control.
Ellipsometric Characterization and Modeling of Different Types of Nanoparticles
Ellipsometric Characterization and Modeling of Different Types of Nanoparticles
UVISEL ellipsometers have been used for the characterization of several systems of nanoparticles. This ellipsometric characterization involves the development of specific modeling tools available within DeltaPsi2 software. Through this report we illustrate the application of ellipsometry to the characterization of nanoparticle based samples. Our goal is to demonstrate that the technique can apply within a large panel of materials science. The HORIBA ellipsometric product line offers the most versatile hardware of the UVISEL series combined with the DeltaPsi2 software including unique modeling features to get the most of your applied work on this fascinating domain of modern physics.
An Ellipsometric Study of the Optical Constants of C60 & C70 Thin Films
An Ellipsometric Study of the Optical Constants of C60 & C70 Thin Films
Spectroscopic ellipsometry (SE) is used to determine the optical constants of C60 and C70 thin films over the range 0.6-6.5eV (i.e. 190-2100nm). The information provided by the optical constants allows for a better understanding of the electronic structure of these materials.
Ellipsometric Characterization of Doped and Undoped Crystalline Diamond Structures
Ellipsometric Characterization of Doped and Undoped Crystalline Diamond Structures
In this work, spectroscopic ellipsometry (SE) was successfully applied to characterize the optical properties and the thicknesses of doped and undoped diamond layers. The sensitivity of this technique enables the doped layer to be distinguished from the undoped one in a sample consisting of a stack of these two layers. Moreover, an interface between the two layers has been detected. This work and others reported previously show clearly that ellipsometry is the technique of choice for the characterization of optical and structural properties of layered materials thanks to its sensitivity and the wide range of information it provides.
Thickness and Optical Constants of Amorphous Carbon Coatings Measured by Spectroscopic Ellipsometry
Thickness and Optical Constants of Amorphous Carbon Coatings Measured by Spectroscopic Ellipsometry
The UVISEL Spectroscopic Ellipsometer is the ideal tool for reliable film thickness and optical constants characterization of amorphous carbon coatings, even in difficult cases where the film thickness is very thin. Roughness, and interface "adhesion" can also been determined.
Characterization of GeSbTe films by Spectroscopic Ellipsometry for Rewritable Optical Discs
Characterization of GeSbTe films by Spectroscopic Ellipsometry for Rewritable Optical Discs
Spectroscopic ellipsometry is a powerful technique for high accuracy characterization of the thickness and optical constants of GeSbTe multilayer system for rewritable optical disc applications. It was shown that measurement in the NIR range gives better accuracy for the analysis of these types of material. The use of the multiple sample analysis reduces parameter correlations and errors for the thinnest layers. Owing to the advanced modeling features included in the DeltaPsi2 software, it is a straightforward procedure to analyze such structures even with layers deposited on both sides of the substrate.
Raman Imaging of a Single Gallium Nitride Nanowire: Pushing the Limits of Confocal Microscopy
Raman Imaging of a Single Gallium Nitride Nanowire: Pushing the Limits of Confocal Microscopy
We have performed a complete Raman polarized study of a single GaN nanowire using a confocal microscope together with a high resolution stage. The high spatial resolution of our Raman confocal instrument together with a piezoelectric stage demonstrates unambiguously the possibility to image the optical properties of nano-objects with a resolution better than 200 nm keeping the fill advantage of the polarization control under a confocal microscope.
Ferroelectric Thin Films Characterization by Spectroscopic Ellipsometry PbZr1-xTixO3 & Ba1-xSrxTiO3
Ferroelectric Thin Films Characterization by Spectroscopic Ellipsometry PbZr1-xTixO3 & Ba1-xSrxTiO3
Spectroscopic ellipsometry is a powerful technique to characterize the thickness and optical constants of complex ferroelectric stacks with high accuracy and precision. Specific modelling features in this study include the characterization of the anisotropic sapphire substrate, rough overlayer and layer inhomogeneity with depth.
Determination of Perovskite Optical Constants
Determination of Perovskite Optical Constants
Hybrid organic-inorganic perovskite materials have emerged over the past five years as promising absorber layers for new high-efficiency and low-cost solar cells that combine the advantages of organic and inorganic semiconductors. The increasing interest in this technology is pushing research laboratories to find the optimal techniques for the accurate characterization of opto-electronic properties of these materials.
Studying perovskite solar cells with HORIBA Scientific equipment
Studying perovskite solar cells with HORIBA Scientific equipment
With their ~20 % efficiency, hybrid perovskite solar cells are the new promising candidate for next generation photovoltaics. Thanks to the wide HORIBA Scientific portfolio, different techniques can be used to gain in depth knowledge on the optoelectronic properties and mechanisms of this class of materials. In this application note we decided to use spectroscopic ellipsometry, steady-state and time-resolved fluorescence and Glow Discharge Optical Emission Spectroscopy to investigate the properties of CH3NH3PbI3 thin films deposited on a spin-coated PEDOT:PSS. The impact of the exposure to air was addressed.

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