Plasma Profiling TOFMS

PP-TOFMS-HORIBA
Plasma Profiling TOFMS video: short introduction to PP-TOFMS technique
Plasma Profiling TOFMS webinar: PP-TOFMS in the cleanroom of CEA-LETI

Ultra-Fast, Sensitive and High Resolution Depth Profiling technique

Plasma Profiling TOFMS addresses the needs of materials scientists across a wide range of application areas. PP-TOFMS provides fast elemental depth distribution of any inorganic material. The speed and ease of use of PP-TOFMS permit to reduce optimization time of growth processes as many research scientists strive to reduce the time from discovery to applications of new materials.

The simultaneous full coverage of TOFMS available for each point of depth permits the detection of non suspected contamination. This is key for failure analysis and optimization of thin film processes that tend to no longer be based on ultra-high grade methods (i.e. ink jet printing…).

PP-TOFMS is an ideal close-to-process tool for materials scientists:

  • To check on stoichiometry versus depth of layers ranging from nm to tens of microns
  • To determine doping depth distribution
  • Identify unsuspected contamination
  • Monitor interface composition and width
Segmento: Scientific
Divisão: GDOES
Fabricante: HORIBA France SAS

PP-TOFMS instrument is

  • Compact
  • Rapid
  • Easy to get hands on
  • General application in materials science
  • Multi-user

 

 

 

  • Glow discharge Plasma Source
  • Unique patented RF pulsing mode
  • No sample preparation, no sample transfer in UHV environment
  • Easy (flat Horizontal) and ergonomic sample positioning with laser help
  • High sample tolerance size from 0.7 cm to 30 cm
  • Standard 4 mm anode (4 mm ⌀ crater)
  • Available 2 mm anode (2 mm ⌀ crater)
  • Oil free environment (Dry pump)
  • Easy removal and cleaning of source parts

 

TOF analyzer

  • Orthogonal extraction
  • High resolution reflectron (resolving power up to 5000 at 208 Th)
  • User friendly, ergonomic, fast hands on
  • Possibility to filter out up to four intense ions for high dynamics: user choice of ions and attenuation amplitude

 

Software

  • Fast automatic starting procedures
  • Real time display of depth profiles
  • One click semi-quantitative depth profile
  • Remote online capability
PP-TOFMS Depth Profiling of ZnO Thin Layers co-doped with Rare Earths for Photonic Materials
PP-TOFMS Depth Profiling of ZnO Thin Layers co-doped with Rare Earths for Photonic Materials
PP-TOFMS is a fast and reliable technique for depth profiling of rare earth doped ZnO thin films. Tb and Eu profiles are obtained with high sensitivity and high depth resolution. This type of information is typically provided by SIMS, RBS or depth profiling XPS but not as rapidly and readily and at a higher cost. Such profiles turn out to be powerful complementary information to understand photoluminescence data. This example extends to similar materials for photonics (lighting, display, solar energy industries) applications such as other wide bandgap semiconductors (SiC, GaN...), nitrides and oxynitrides layers, silicon nano-objects, glasses... doped with Yb, Y, Sm, Er, Nd, Pr, and Tm...

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