MiniVS70

MiniVS70 Compact High Resolution CMOS or CCD Spectrometer

Compact High Resolution CMOS or CCD Spectrometer

MiniVS70 is the latest evolution of the cost-effective high performance family of mini-spectrometers from HORIBA Scientific. This MiniVS70 system for industrial applications uses a modified miniaturized VS70 optical engine which is optimized for the UV-VIS-NIR spectral range. The MiniVS70 is based on a high performance aberration corrected concave grating fitted with a custom order-sorting filter to eliminate higher orders.

This platform is specially designed to easily adapt to a large variety of detectors and electronic drivers. The optical design is optimized to minimize stray light and maximize optical performance. The MiniVS70 outperforms competitive mini-spectrometers based on front-illuminated CMOS linear sensors or low-cost back-illuminated CCDs.

For OEM Industrial Applications

  • Fluorescence, Emission and Reflectance
  • Examples:
    • Semiconductors 
    • Analytical Chemistry
    • Process Monitoring
    • Medical Analysis (blood, DNA, etc.)
    • Metrology
    • Chemical Fingerprint by Plasma Analysis

 

*Available in select countries.

You can email OEM Technical Sales at: OEM.US@horiba.com or contact OEM at: +1.732.494.8660 Ext. 7733

Segment: Scientific
Division: OEM
Manufacturing Company: HORIBA Scientific
  • High spectral resolution
  • Compact size, robustness, and stability
  • Configurable with linear CMOS for affordability, or CCD for highest sensitivity
  • Various wavelength ranges UV-VIS / VIS / UV-NIR
  • Ultra low stray light
  • Highly customizable for many applications
  • High volume production capacity

 

Quantum Efficiencies

 

CCD Selection Guide

 

 

 

General Spectrometer Specifications*

Spectral Coverage

200 - 1050 nm with double-blazed 365 l/mm grating, 190 – 850 nm with 477 l/mm grating,
≤ 400 – ≥ 800 nm with 582 l/mm grating

Spectral Resolution

2 nm for 365 l/mm grating, 1 nm for 477 l/mm grating, 0.8 nm for 582 l/mm grating (25 μm slit for all)

Average Spectral Dispersion

30.9 nm/mm for 365 l/mm grating, 23.7 nm/mm for 477 l/mm grating,
16.3 nm/mm for 582 l/mm grating

Focal Length

70 mm

OptionsSelection of high grade sensors: CMOS, B.I. CCD, PDA
Input port: SMA, FC, free space, custom input

F/#

~ F/3.8

Wavelength Accuracy

<0.25 nm (using multi-area wavelength calibration)
Stray Light< 0.1%

Software

LabVIEW™ acquisition software for initial evaluation (DLLs provided for software integration)

 

Detector Options and Specifications
Linear front illuminated CMOS sensor
with high speed and UV extension
Linear back-illuminated CCD with large active area
with high sensitivity
Sensor TypeHamamatsu CMOS linear
image sensor S11639
with active pixel structure
and global e-shutter
Hamamatsu CCD sensor
S11071 with high spectral
acquisition speed
Hamamatsu CCD sensor
S10420 with high dynamic
range
Sensor Format2048 x 1 pixels2048 x 70 pixels, shorter
version available on request
2048 x 70 pixels, shorter
version available on request
Active Area28.7 x 0.2 mm28.7 x 1 mm28.7 x 1 mm
Pixel Size14 x 200 μm14 x 14 μm14 x 14 μm
QE> 60% for 450 - 750 nm
Full Well Capacity100,000 e¯ (typical)
80,000 e¯ (minimum)
>240,000 e¯ (typical)
>175,000 e¯ (minimum)
>375,000 e¯ (high FW mode)
Readout Noise16 e¯ (typical)
20 e¯ (maximum)
35 e¯ (typical)
45 e¯ (maximum)
50 e¯ (typical) & 75 e¯ maximum)
in high full well mode
Maximum Spectral Rate1400 spectra/s and higher770 spectra/s223 spectra/s
ADC16-bit16-bit16-bit
Dynamic Range (FW/RN)6250:1 (typical)6800:1 (typical)7500:1 (high FW mode) (typical)
Non-linearity<0.1% (corrected)<0.4% (corrected)<0.4% (corrected)
Dark Current (@25° C)375 e¯/pixel/s (typical)
500 e¯/pixel/s (maximum)
50 e¯/pixel/s (typical)
500 e¯/pixel/s (maximum)
50 e¯/pixel/s (typical)
500 e¯/pixel/s (maximum)
CommunicationUSB 2
Environmental
Conditions
Operating temperature +15° C to 45° C ambient
Relative humidity <70% (non-condensing); Storage temperature -20° C to 60° C
Power RequirementsThrough USB 2Y Cable (5 VDC)

Other detector options, such as CMOS-PDAs with passive pixel structure and full well up to 1Ge- available.

Linear CMOS-PDA Options (other sensors available upon request)
Sensor typeS1012X Series (High Performance)S837X Series (Low Cost)
Pixel Format25 or 50 μm pixel pitch; 0.5 or 2.5 mm pixel height; 512 pixels or 1024 pixels 
Detector QERefer to graphs below 
Full Well (e-)From 94 Me¯ to 1 Ge¯ (typical)From 43 Me¯ to 430 Me¯ (typical)
Readout Noise (e-)5200 e¯ (typical)3370 e¯ (typical)
Spectrometer housing will be slightly different depending on CMOS-PDA options

 

 

Quantum Efficiencies

Mechanical Drawings

Download Mechanical Drawings

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