Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface. A common type of dry etching is reactive-ion etching. Unlike with many (but not all, see isotropic etching) of the wet chemical etchants used in wet etching, the dry etching process typically etches directionally or anisotropically.
High Speed & Precision Pressure Insensitive Mass Flow Module
Wide Range Pressure Insensitive Mass Flow Module
Pressure Insensitive Mass Flow Module
Ultra-thin Mass Flow Module
Thermal Flow Splitter
Multi Range/Multi Gas Digital Mass Flow Controller
New concept Pressure Insensitive Mass Flow Module
Pressure Insensitive Mass Flow Controller
Direct Liquid Injection System
Piezo Actuator Valve
Digital Automatic Pressure Regulator
Wafer Back Side Cooling System
Quadrupole Mass Analyzer
Capacitance Manometer
Endpoint / Chamber Health Monitor based on Optical Emission Spectroscopy and MWL Interferometry
Optical Emission Spectroscopy Etching End-point Monitor
High-Accuracy Infrared Thermometers [Stationary type]
High-Accuracy Infrared Thermometer [Built-in type]
Camera Endpoint Monitor based on Real Time Laser Interferometry
Plasma Emission Controller
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