As semiconductor devices shrink to nanometer scales, Raman microscopy as an optical technique encounters a fundamental barrier due to the diffraction limit, which limits the analysis of semiconductor nanostructures. To overcome this, a group @IMEC has developed a method based on polarization-induced enhancement allowing to effectively detect structures much smaller than the light’s wavelength. As a result, Raman spectroscopy can now measure things like stress and composition at the nanoscale, which was previously difficult.
Moreover, this method examines the entire material structure, not just the surface, turning Raman spectroscopy into a tool that can measure both the volume and shape of materials. This opens up new possibilities for Raman spectroscopy to be used in the fab environment.
Photoluminescence and Raman Wafer Imaging
Raman Microscope
Fully Automated Thin Film Inspection System
HORIBA제품의 자세한 정보를 원하시면, 아래의 양식에 내용을 입력을 부탁드립니다.
