Raman spectroscopy is an essential analytical technique in materials science, offering non-destructive, contactless measurement of vibrational modes that are sensitive to crystal structure, composition, and mechanical stress. In the case of wide bandgap semiconductors like silicon carbide (SiC), which are widely used in high-power and high-temperature electronic applications, understanding and controlling stress is critical. Stress can influence electronic properties, impact device performance, and affect long term reliability. This application note presents how Raman spectroscopy can be effectively applied to monitor and evaluate stress during surface processing of 4H-SiC substrates.
Confocal Raman & High-Resolution Spectrometer
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