As semiconductor devices shrink to nanometer scales, Raman microscopy as an optical technique encounters a fundamental barrier due to the diffraction limit, which limits the analysis of semiconductor nanostructures. To overcome this, a group @IMEC has developed a method based on polarization-induced enhancement allowing to effectively detect structures much smaller than the light’s wavelength. As a result, Raman spectroscopy can now measure things like stress and composition at the nanoscale, which was previously difficult.
Moreover, this method examines the entire material structure, not just the surface, turning Raman spectroscopy into a tool that can measure both the volume and shape of materials. This opens up new possibilities for Raman spectroscopy to be used in the fab environment.
Photoluminescence and Raman Wafer Imaging
高分辨超灵敏智能拉曼成像仪
全自动薄膜量测系统
如您有任何疑问，请在此留下详细需求信息，我们将竭诚为您服务。
