Combined Spectroscopic Analyses of semiconductor Material Structures at the Microscopic Level

An introduction to:

InGaAs, InP, GaN, SiGe, GaAs, GaSb, InSb, SiC characterization.

Raman and photoluminescence spectroscopy are powerful tools for probing the structure of many semiconductor materials. Recent advances in detector technology and spectrometer design have simplified and greatly improved the acquisition capabilities for these techniques.

Both Raman and PL spectroscopy are non-destructive, non-invasive techniques, and the combination of the two in one instrument dramatically increases throughput in quality control and research applications alike. They are used to study materials such as Si, InGaAs, InP, GaN, SiGe, GaAs, GaSb,InSb, and SiC , used in detectors and diode emitters, and provides information directly related to the electronic and optical properties of the final product in question


HORIBA Jobin Yvon's LabRAM 800HR for example is a unique bench-top system that combines micro Raman and photoluminescence (PL) spectroscopy in a single instrument. This means that academic researchers and manufacturers of silicon and group III and V semiconducting materials can measure both the vibrational characteristics of the molecules and their electronic structure quickly and conveniently. This yields a much greater depth of information than is possible from just a single analysis. The instrument incorporates an integral confocal Raman / PL microscope, making it possible to detect discontinuities in crystal growth, homogeneity, composition, contamination, dopant effects and regions of stress on the micron scale. The user can switch easily between Raman and PL spectroscopy at the same point on the sample without any need for optical adjustment.

In an industrial facility, the multi-channel acquisition, automated focusing and mapping provided by the LabRAM HR enables fast quality surveys of wafer production to be coupled with the higher end applications of material development and production control.

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