Nano-indented Silicon
  • System: LabRAM HR Evolution
  • Time per point: 400 ms
  • Step size: 100 nm
  • Data points: 2,450

Peak position image of Silicon after nano-indentation with a Berkovich indentor. The lattice strain is clearly visible around the indentation, causing a significant shift in the first order Silicon phonon, typically positioned at 520.7 cm-1 for a strain-free crystalline lattice.