To reduce the chamber-to-chamber variation and to optimize the yield of an etching tool, HORIBA offers a wide range of fluid control modules and smart sensors for endpoint detection and chamber health monitoring. Compact and robust, they can be used for R&D and for Production.

蚀刻在微细制造中用于在制造过程中化学去除晶圆片表面的层。蚀刻是一个非常重要的工艺模块，每个晶圆在完成之前都要经过许多蚀刻步骤。

在许多蚀刻步骤中，晶圆片的一部分被一种抗蚀刻的“掩蔽”材料保护起来不受蚀刻剂的影响。在某些情况下，掩蔽材料是用光刻法制成的光刻胶。其他情况需要更耐用的掩膜，如氮化硅。

Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface. A common type of dry etching is reactive-ion etching. Unlike with many (but not all, see isotropic etching) of the wet chemical etchants used in wet etching, the dry etching process typically etches directionally or anisotropically.