Semiconductor Page Heading

Surface Analysis

Surface analysis equipment using HORIBA's spectroscopic technology realizes highly accurate surface analysis that can be achieved by its precise spectroscopic analysis.

GD-OES (Glow Discharge Optical Emission Spectroscopy) is an analysis method for rapid depth profile analysis of samples that have undergone various surface treatments such as plating, heat treatment, vapor deposition, and sputtering. This is an effective analysis method for evaluating multi-layered films of compound semiconductors.

Raman spectroscopy is used to evaluate crystallinity and stress in the field of semiconductors. Raman spectra can be acquired with high resolution, and subtle differences can be discerned.

GD-Profiler 2™辉光放电光谱仪
详情 GD-Profiler 2™辉光放电光谱仪