Multi-information at the nanoscale for the development of tomorrow’s 2D semiconductors

This article reports on nano-characterization of 2D transition metal dichalcogenides (TMDCs) materials which are considered of very high potential semiconductors for future nanosized electronic and optoelectronic devices. Atomic force microscopy (AFM) giving access to the critical topographic and electronic properties at the nanoscale is coupled to photoluminescence (PL) and Raman spectroscopies by means of plasmon enhancement to yield correlated electrical and chemical information down to the nanoscale.